MC9S08DZ60CLH Datasheet, PDF (55/416 Pages) Freescale Semiconductor, Inc – MC9S08DZ60 Series Features

PROGRAM AND
ERASE FLOW
WRITE TO FCDIV⁽¹⁾
START
0
FACCERR?
(1) _{Required only once}
after reset.
CLEAR ERROR
Chapter 4 Memory
WRITE TO FLASH OR EEPROM TO
BUFFER ADDRESS AND DATA
WRITE COMMAND TO FCMD
WRITE 1 TO FCBEF
TO LAUNCH COMMAND
AND CLEAR FCBEF ⁽²⁾
(2) _{Wait at least four bus cycles}
before checking FCBEF or FCCF.
FPVIOL OR
FACCERR?
NO
0
FCCF?
1
DONE
YES
ERROR EXIT
Figure 4-2. Program and Erase Flowchart
4.5.4 Burst Program Execution
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. This is possible because the high voltage to the Flash array
does not need to be disabled between program operations. Ordinarily, when a program or erase command
is issued, an internal charge pump associated with the Flash memory must be enabled to supply high
voltage to the array. Upon completion of the command, the charge pump is turned off. When a burst
program command is issued, the charge pump is enabled and remains enabled after completion of the burst
program operation if these two conditions are met:
• The next burst program command sequence has begun before the FCCF bit is set.
• The next sequential address selects a byte on the same burst block as the current byte being
programmed. A burst block in this Flash memory consists of 32 bytes. A new burst block begins
at each 32-byte address boundary.
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
MC9S08DZ60 Series Data Sheet, Rev. 4
Freescale Semiconductor
55