MC908AZ32ACFUE Datasheet, PDF (44/324 Pages) Freescale Semiconductor, Inc – Microcontrollers

Flash Memory
4.3 FLASH Control and Block Protect Registers
The FLASH array has two registers that control its operation, the FLASH Control Register (FLCR) and the
FLASH Block Protect Register (FLBPR).
4.3.1 FLASH Control Register
The FLASH Control Register (FLCR) controls FLASH program and erase operations.
Address: $FF88
Bit 7
6
5
4
3
2
1
Bit 0
Read: 0
0
0
0
HVEN MASS ERASE PGM
Write:
Reset: 0
0
0
0
0
0
0
0
= Unimplemented
Figure 4-1. FLASH Control Register (FLCR)
HVEN — High-Voltage Enable Bit
This read/write bit enables the charge pump to drive high voltages for program and erase operations
in the array. HVEN can only be set if either PGM = 1 or ERASE = 1 and the proper sequence for
program or erase is followed.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
MASS — Mass Erase Control Bit
Setting this read/write bit configures the FLASH array for mass or page erase operation.
1 = Mass erase operation selected
0 = Page erase operation selected
ERASE — Erase Control Bit
This read/write bit configures the memory for erase operation. ERASE is interlocked with the PGM bit
such that both bits cannot be set at the same time.
1 = Erase operation selected
0 = Erase operation unselected
PGM — Program Control Bit
This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE
bit such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = Program operation selected
0 = Program operation unselected
MC68HC908AZ32A Data Sheet, Rev. 2
44
Freescale Semiconductor