C8051F980-C-GM Datasheet, PDF (60/325 Pages) Silicon Laboratories – Ultra Low Power, 8-2 kB Flash, Capacitive Sensing MCU

C8051F99x-C8051F98x
Table 4.10. ADC0 Electrical Characteristics (Continued)
V_DD = 1.8 to 3.6 V, VREF = 1.65 V (REFSL[1:0] = 11), –40 to +85 °C unless otherwise specified.
Parameter
Analog Inputs
Conditions
Min Typ Max Units
ADC Input Voltage Range
Single Ended (AIN+ – GND)
0
Absolute Pin Voltage with respect
Single Ended
0
to GND
Sampling Capacitance
1x Gain
—
0.5x Gain
— VREF
V
— VDD
V
16
—
pF
13
Input Multiplexer Impedance
—
5
—
k
Power Specifications
Power Supply Current 
(V_DD supplied to ADC0)
Normal Power Mode:
Conversion Mode (300 ksps) —
650
—
µA
Tracking Mode (0 ksps)
—
740
—
Low Power Mode:
Conversion Mode (150 ksps) —
370
—
Tracking Mode (0 ksps)
—
400
—
Power Supply Rejection
Internal High Speed VREF
—
67
—
dB
External VREF
—
74
—
1. INL and DNL specifications for 12-bit mode do not include the first or last four ADC codes.
2. The maximum code in 12-bit mode is 0xFFFC. The Full Scale Error is referenced from the maximum code.
3. Performance in 8-bit mode is similar to 10-bit mode.
Table 4.11. Temperature Sensor Electrical Characteristics
V_DD = 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.
Parameter
Conditions
Min
Linearity
—
Slope
—
Slope Error*
—
Offset
Temp = 25 °C
—
Offset Error*
Temp = 25 °C
—
Temperature Sensor Turn-On
—
Time
Supply Current
—
*Note: Represents one standard deviation from the mean.
Typ
±1
3.40
40
1025
18
1.7
Max
—
—
—
—
—
—
Units
°C
mV/°C
µV/°C
mV
mV
µs
35
—
µA
60
Rev. 1.2