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C8051F980-C-GM Datasheet, PDF (58/325 Pages) Silicon Laboratories – Ultra Low Power, 8-2 kB Flash, Capacitive Sensing MCU | |||
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C8051F99x-C8051F98x
Table 4.5. Power Management Electrical Specifications
VDD = 1.8 to 3.6 V, â40 to +85 °C unless otherwise specified.
Parameter
Conditions
Min Typ
Idle Mode Wake-up Time
2
â
Suspend Mode Wake-up Time
CLKDIV = 0x00
â
400
Low Power or Precision Osc.
Sleep Mode Wake-up Time
â
2
Max
Units
3 SYSCLKs
â
ns
â
µs
Table 4.6. Flash Electrical Characteristics
VDD = 1.8 to 3.6 V, â40 to +85 °C unless otherwise specified.
Parameter
Flash Size
Conditions
C8051F980/1/6/7, C8051F990/1/6/7
C8051F982/3/8/9
C8051F985
Endurance
Erase Cycle Time
Write Cycle Time
Min
8192
4096
2048
20 k
28
57
Typ
â
â
â
100k
32
64
Max
Units
â
bytes
â
bytes
â
bytes
â
Erase/Write
Cycles
36
ms
71
µs
Table 4.7. Internal Precision Oscillator Electrical Characteristics
VDD = 1.8 to 3.6 V; TA = â40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
Parameter
Conditions
Min
Typ
Max
Oscillator Frequency
â40 to +85 °C,
VDD = 1.8â3.6 V
24
24.5
25
Oscillator Supply Current ï
(from VDD)
25 °C; includes bias current
of 90â100 µA
â
300*
â
*Note: Does not include clock divider or clock tree supply current.
Units
MHz
µA
Table 4.8. Internal Low-Power Oscillator Electrical Characteristics
VDD = 1.8 to 3.6 V; TA = â40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
Parameter
Conditions
Min
Typ
Max
Oscillator Frequency
â40 to +85 °C,
VDD = 1.8â3.6 V
18
20
22
Oscillator Supply Current ï
25 °C
(from VDD)
No separate bias current
â
100*
â
required
*Note: Does not include clock divider or clock tree supply current.
Units
MHz
µA
58
Rev. 1.2
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