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C8051F980-C-GM Datasheet, PDF (49/325 Pages) Silicon Laboratories – Ultra Low Power, 8-2 kB Flash, Capacitive Sensing MCU | |||
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C8051F99x-C8051F98x
4.2. Electrical Characteristics
Table 4.2. Global Electrical Characteristics
â40 to +85 °C, 25 MHz system clock unless otherwise specified. See "AN358: Optimizing Low Power Operation of the
âF9xx" for details on how to achieve the supply current specifications listed in this table.
Parameter
Supply Voltage (VDD)
Conditions
Min Typ Max
1.8 2.4 3.6
Minimum RAM Data ï
Retention Voltage1
not in sleep mode
in sleep mode
â 1.4 â
â 0.3 0.45
SYSCLK (System Clock)2
TSYSH (SYSCLK High Time)
TSYSL (SYSCLK Low Time)
Specified Operating ï
Temperature Range
0 â 25
18 â â
18 â â
â40 â +85
Digital Supply CurrentâCPU Active (Normal Mode, fetching instructions from Flash)
IDD 3, 4, 5
VDD = 1.8â3.6 V, F = 24.5 MHz
(includes precision oscillator current)
â 3.6 4.5
VDD = 1.8â3.6 V, F = 20 MHz
(includes low power oscillator current)
â 3.1 â
VDD = 1.8 V, F = 1 MHz
VDD = 3.6 V, F = 1 MHz
â 225 â
â 290 â
(includes external oscillator/GPIO current)
VDD = 1.8â3.6 V, F = 32.768 kHz
â 84 â
(includes SmaRTClock oscillator current)
IDD Frequency ï
Sensitivity1, 3, 5
VDD = 1.8â3.6 V, T = 25 °C, F < 14 MHz â 174 â
(Flash oneshot active, see Section 14.6)
VDD = 1.8â3.6 V, T = 25 °C, F > 14 MHz â 88 â
(Flash oneshot bypassed, see Section
14.6)
Units
V
V
MHz
ns
ns
°C
mA
mA
µA
µA
µA
µA/MHz
µA/MHz
Rev. 1.2
49
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