K5D5657ACM Datasheet, PDF (70/74 Pages) Samsung semiconductor – 256Mb NAND and 256Mb Mobile SDRAM

K5D5657ACM-F015
PrelAimdvinanacrye
MCP MEMORY
Active/Precharge Power Down Mode @CAS Latency=2, Burst Length=4
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CLOCK
tSS
tSS
tSS
CKE
*Note 1
*Note 2
*Note 2
*Note 3
CS
RAS
CAS
ADDR
Ra
Ca
BA
A10/AP
Ra
DQ
Qa0 Qa1 Qa2
tSHZ
WE
DQM
Precharge
Power-down
Entry
Row Active
Read
Precharge
Power-down
Exit
Active
Power-down
Entry
Active
Power-down
Exit
*NOTE:
1. All banks should be in idle state prior to entering precharge power down mode.
2. CKE should be set high at least 1CLK + tSS prior to Row active command.
3. Can not violate minimum refresh specification. (64ms)
Precharge
: Don’t care
- 70 -
Revision 0.1
September 2003