K5D5657ACM Datasheet, PDF (15/74 Pages) Samsung semiconductor – 256Mb NAND and 256Mb Mobile SDRAM

K5D5657ACM-F015
NAND Flash Technical Notes(Continued)
Erase Flow Chart
Start
Write 60h
Write Block Address
Write D0h
Read Status Register
PrelAimdvinanacrye
MCP MEMORY
Read Flow Chart
Start
Write 00h
Write Address
Read Data
ECC Generation
I/O 6 = 1 ?
No
or R/B = 1 ?
*
No
Erase Error
Yes
I/O 0 = 0 ?
Yes
Erase Completed
No
Reclaim the Error
Verify ECC
Yes
Page Read Completed
* : If erase operation results in an error, map out
the failing block and replace it with another block.
Block Replacement
{ ^1st
(n-1)th
nth
(page)
Block A
an error occurs.
2
Buffer memory of the controller.
Block B
{ ^1st
(n-1)th
1
nth
(page)
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the nth page data of the Block ’A’ in the buffer memory to the nth page of another free block. (Block ’B’)
* Step3
Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’B’.
* Step4
Do not further erase Block ’A’ by creating an ’invalid Block’ table or other appropriate scheme.
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Revision 0.1
September 2003