K5D5657ACM Datasheet, PDF (19/74 Pages) Samsung semiconductor – 256Mb NAND and 256Mb Mobile SDRAM

K5D5657ACM-F015
Input Data Latch Cycle
PrelAimdvinanacrye
MCP MEMORY
CLE
tCLH
tCH
CE
ALE
tALS
tWC
WE
I/Ox
tWP
tWH
tDS ^tDH
DIN 0
tWP
tDS ^tDH
DIN 1
tWP
tDS ^tDH
DIN n
Sequential Out Cycle after Read(CLE=L, WE=H, ALE=L)
CE
RE
I/Ox
R/B
tRC
tREA
tRP
tREH
tREA
tRHZ*
Dout
tRR
Dout
tREA
tCHZ*
tOH
tRHZ*
tOH
Dout
NOTE :
1. Transition is measured ±200mV from steady state voltage with load.
2. This parameter is sampled and not 100% tested.
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Revision 0.1
September 2003