K5D5657ACM Datasheet, PDF (32/74 Pages) Samsung semiconductor – 256Mb NAND and 256Mb Mobile SDRAM

K5D5657ACM-F015
PrelAimdvinanacrye
MCP MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 2.6
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 2.6
Storage temperature
TSTG
-55 ~ +150
Power dissipation
PD
1.0
Short circuit current
IOS
50
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Unit
V
V
°C
W
mA
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25°C ~ 85°C for Extended, -25°C ~ 70°C for Commercial
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
VDD
1.65
1.8
1.95
V
VDDQ
1.65
1.8
1.95
V
Input logic high voltage
VIH
0.8 x VDDQ
1.8
VDDQ + 0.3
V
1
Input logic low voltage
VIL
-0.3
0
0.3
V
2
Output logic high voltage
VOH
VDDQ -0.2
-
-
V
IOH = -0.1mA
Output logic low voltage
VOL
-
-
0.2
V
IOL = 0.1mA
Input leakage current
ILI
-10
-
10
uA
3
)_{NOTES :}
1. VIH (max) = 2.2V AC.The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -1.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
4. Dout is disabled, 0V ≤ VOUT ≤ VDDQ.
CAPACITANCE (VDD = 1.8V, TA = 23°C, f = 1MHz, VREF =0.9V ± 50 mV)
Pin
Symbol
Min
Clock
CCLK
TBD
RAS, CAS, WE, CS, CKE, DQM
CIN
TBD
Address
CADD
TBD
DQ0 ~ DQ15
COUT
TBD
Max
TBD
TBD
TBD
TBD
Unit
pF
pF
pF
pF
Note
- 32 -
Revision 0.1
September 2003