K5D5657ACM Datasheet, PDF (67/74 Pages) Samsung semiconductor – 256Mb NAND and 256Mb Mobile SDRAM

K5D5657ACM-F015
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MCP MEMORY
Read Interrupted by Precharge Command & Read Burst Stop Cycle @Full Page Burst
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CLOCK
CKE
HIGH
CS
RAS
CAS
ADDR
RAa
CAa
CAb
BA0
BA1
A10/AP
RAa
{^CL=2
DQ
CL=3
1
QAa0 QAa1 QAa2 QAa3 QAa4
2
QAa0 QAa1 QAa2 QAa3 QAa4
1
QAb0 QAb1 QAb2 QAb3 QAb4 QAb5
2
QAb0 QAb1 QAb2 QAb3 QAb4 QAb5
WE
DQM
Row Active
(A-Bank)
Read
(A-Bank)
Burst Stop
Read
(A-Bank)
*NOTE:
1. At full page mode, burst is finished by burst stop or precharge.
2. About the valid DQs after burst stop, it is same as the case of RAS interrupt.
Both cases are illustrated above timing diagram. See the label 1, 2 on them.
But at burst write, Burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of "Full page write burst stop cycle".
3. Burst stop is valid at every burst length.
Precharge
(A-Bank)
: Don’t care
- 67 -
Revision 0.1
September 2003