K5D5657ACM Datasheet, PDF (5/74 Pages) Samsung semiconductor – 256Mb NAND and 256Mb Mobile SDRAM

K5D5657ACM-F015
PIN DESCRIPTION
Pin Name
CLK
CKE
/CS
/RAS
/CAS
/WEd
A0 ~ A12
BA0 ~ BA1
LDQM
UDQM
DQ0d ~ DQ15d
Vdd
Vddq
Vss
Vssq
Pin Function(Mobile SDRAM)
System Clock
Clock Enable
Chip Select
Row Address Strobe
Column Address Strobe
Write Enable
Address Input
Bank Address Input
Lower Input/Output Data Mask
Upper Input/Output Data Mask
Data Input/Output
Power Supply
Data Out Power
Ground
DQ Ground
PrelAimdvinanacrye
MCP MEMORY
Pin Name
/CE
/RE
/WP
/WE
ALE
CLE
R/B
IO0 ~ IO7
Vcc
Vccq
Vss
Pin Function(NAND Flash)
Chip Enable
Read Enable
Write Protection
Write Enable
Address Latch Enable
Command Latch Enable
Ready/Busy Output
Data Input/Output
Power Supply
Data Out Power
Ground
Pin Name
NC
DNU
Pin Function
No Connection
Do Not Use
ORDERING INFORMATION
K 5 D 56 57 A C M - F 0 15
Samsung
MCP Memory(2chips)
Device Type
NAND Flash + Mobile SDRAM
NAND Flash Density,
Organization
56 : 256Mbit, x8
Mobile SDRAM Density, Organization
57 : 256Mbit, x16
Mobile SDRAM Speed
15 = 15ns, CL=2
NAND Flash Speed
0 = None
Package
F = FBGA(Leaded)
Version
M= 1st Generation
Operating Voltage
A: 1.8V / 1.8V
Flash Block Architecture
C = Uniform Block
NOTE :
1. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.
Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific purpose,
such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
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Revision 0.1
September 2003