K5D5657ACM Datasheet, PDF (63/74 Pages) Samsung semiconductor – 256Mb NAND and 256Mb Mobile SDRAM

K5D5657ACM-F015
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MCP MEMORY
Read & Write Cycle at Different Bank @Burst Length=4
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CLOCK
CKE
HIGH
CS
RAS
CAS
ADDR RAa
CAa
RDb
CDb RBc
CBc
BA0
BA1
A10/AP
RAa
{^CL=2
DQ
CL=3
RDb
QAa0 QAa1 QAa2 QAa3
QAa0 QAa1 QAa2 QAa3
RBc
tCDL _{*Note 1}
DDb0 DDb1 DDb2 DDb3
QBc0 QBc1 QBc2
DDb0 DDb1 DDb2 DDb3
QBc0 QBc1
WE
DQM
Row Active Read
(A-Bank) (A-Bank)
Precharge
(A-Bank)
Row Active
(D-Bank)
*NOTE:
1. tCDL should be met to complete write.
Write
(D-Bank)
Row Active
(B-Bank)
Read
(B-Bank)
: Don’t care
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Revision 0.1
September 2003