K5D5657ACM Datasheet, PDF (64/74 Pages) Samsung semiconductor – 256Mb NAND and 256Mb Mobile SDRAM

K5D5657ACM-F015
PrelAimdvinanacrye
MCP MEMORY
Read & Write Cycle with Auto Precharge I @Burst Length=4
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CLOCK
CKE
HIGH
CS
RAS
CAS
ADDR
RAa
RBb CAa
CBb
RAc
CAc
BA0
BA1
A10/AP
RAa
RBb
RAc
DQ CL=2
QAa0 QAa1 QBb0 QBb1 QBb2 DBb3
DAc0 DAc1
CL=3
WE
DQM
QAa0 QAa1 QBb0 QBb1 QBb2 DBb3
DAc0 DAc1
Row Active
(A-Bank)
Read with
Auto Pre
charge
(A-Bank)
Row Active
(B-Bank)
Read without Auto
Precharge(B-Bank)
Auto Precharge
Start Point
(A-Bank) *Note1
Precharge
(B-Bank)
Row Active
(A-Bank)
*NOTE:
1. When Read(Write) command with auto precharge is issued at A-Bank after A and B Bank activation.
- if Read(Write) command without auto precharge is issued at B-Bank before A-Bank auto precharge starts, A-Bank
auto precharge will start at B-Bank read command input point .
- any command can not be issued at A-Bank during tRP after A-Bank auto precharge starts.
Write with
Auto Precharge
(A-Bank)
: Don’t care
- 64 -
Revision 0.1
September 2003