K5D5657ACM Datasheet, PDF (21/74 Pages) Samsung semiconductor – 256Mb NAND and 256Mb Mobile SDRAM

K5D5657ACM-F015
READ1 OPERATION (INTERCEPTED BY CE)
CLE
PrelAimdvinanacrye
MCP MEMORY
CE
WE
ALE
RE
I/Ox
R/B
tWB
tAR
tCHZ
tOH
tR
tRC
N Address
tRR
Read
CMD
Col. Add Row Add1 Row Add2
Column
Address
Page(Row)
Address
Busy
Dout N Dout N+1 Dout N+2 Dout N+3
READ2 OPERATION (READ ONE PAGE)
CLE
CE
WE
ALE
RE
I/Ox
R/B
tR
tWB
tAR
tRR
50h
Col. Add Row Add1 Row Add2
M Address
A0~A3 are Valid Address & A4~A7 are Don′t care
- 21 -
Dout
Dout
512+M 512+M+1
Dout 528
Selected
Row
512
16
Start
address M
Revision 0.1
September 2003