K5D5657ACM Datasheet, PDF (56/74 Pages) Samsung semiconductor – 256Mb NAND and 256Mb Mobile SDRAM

K5D5657ACM-F015
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MCP MEMORY
Power Up Sequence
Single Bit Read - Write - Read Cycle(Same Page) @CAS Latency=3, Burst Length=1
Read & Write Cycle at Same Bank @Burst Length=4, tRDL=2CLK
Page Read & Write Cycle at Same Bank @Burst Length=4, tRDL=2CLK
Page Read Cycle at Different Bank @Burst Length=4
Page Write Cycle at Different Bank @Burst Length=4, tRDL=2CLK
Read & Write Cycle at Different Bank @Burst Length=4
Read & Write Cycle With Auto Precharge l @Burst Length=4
Read & Write Cycle With Auto Precharge ll @Burst Length=4
Clock Suspension & DQM Operation Cycle @CAS Letency=2, Burst Length=4
Read Interrupted by Precharge Command & Read Burst Stop Cycle @ Full Page Burst
Write Interrupted by Precharge Command & Write Burst Stop Cycle @ Full Page Burst, tRDL=2CLK
Burst Read Single bit Write Cycle @Burst Length =2
Active/precharge Power Dower Down Mode @CAS Latency=2 Burst Length=4
Self Refresh Entry & Exit Cycle & Exit Cycle
Mode Register Set Cycle and Auto Refresh Cycle
Extended Mode Register Set Cycle
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Revision 0.1
September 2003