K5D5657ACM Datasheet, PDF (53/74 Pages) Samsung semiconductor – 256Mb NAND and 256Mb Mobile SDRAM

K5D5657ACM-F015
PrelAimdvinanacrye
MCP MEMORY
FUNCTION TRUTH TABLE (TABLE 1)
Current
State
CS RAS CAS WE
BA
Address
Action
H
X
X
X
X
X
NOP
L
H
H
H
X
X
NOP
L
H
H
L
X
X
ILLEGAL
IDLE
L
H
L
X
BA CA, A10/AP ILLEGAL
L
L
H
H
BA
RA
Row (& Bank) Active ; Latch RA
L
L
H
L
BA
A10/AP NOP
L
L
L
H
X
X
Auto Refresh or Self Refresh
L
L
L
L OP code OP code Mode Register Access
H
X
X
X
X
X
NOP
L
H
H
H
X
X
NOP
L
H
H
L
X
X
ILLEGAL
Row
Active
L
H
L
H
L
H
L
L
BA CA, A10/AP Begin Read ; latch CA ; determine AP
BA CA, A10/AP Begin Read ; latch CA ; determine AP
L
L
H
H
BA
RA
ILLEGAL
L
L
H
L
BA
A10/AP Precharge
L
L
L
X
X
X
ILLEGAL
H
X
X
X
X
X
NOP (Continue Burst to End --> Row Active)
L
H
H
H
X
X
NOP (Continue Burst to End --> Row Active)
L
H
H
L
X
X
Term burst --> Row active
Read
L
H
L
H
BA CA, A10/AP Term burst, New Read, Determine AP
L
H
L
L
BA CA, A10/AP Term burst, New Write, Determine AP
L
L
H
H
BA
RA
ILLEGAL
L
L
H
L
BA
A10/AP Term burst, Precharge timing for Reads
L
L
L
X
X
X
ILLEGAL
H
X
X
X
X
X
NOP (Continue Burst to End --> Row Active)
L
H
H
H
X
X
NOP (Continue Burst to End --> Row Active)
L
H
H
L
X
X
Term burst --> Row active
Write
L
H
L
H
BA CA, A10/AP Term burst, New read, Determine AP
L
H
L
L
BA CA, A10/AP Term burst, New Write, Determine AP
L
L
H
H
BA
RA
ILLEGAL
L
L
H
L
BA
A10/AP Term burst, precharge timing for Writes
L
L
L
X
X
X
ILLEGAL
H
X
X
X
X
X
NOP (Continue Burst to End --> Precharge)
L
Read with
Auto
L
Precharge
L
L
H
H
H
H
H
L
H
L
X
L
H
X
X
X
NOP (Continue Burst to End --> Precharge)
X
X
ILLEGAL
BA CA, A10/AP ILLEGAL
BA
RA, RA10 ILLEGAL
L
L
L
X
X
X
ILLEGAL
H
X
X
X
X
X
NOP (Continue Burst to End --> Precharge)
L
Write with
Auto
L
Precharge
L
L
H
H
H
H
H
L
H
L
X
L
H
X
X
X
NOP (Continue Burst to End --> Precharge)
X
X
ILLEGAL
BA CA, A10/AP ILLEGAL
BA
RA, RA10 ILLEGAL
L
L
L
X
X
X
ILLEGAL
Note
2
2
4
5
5
2
2
3
2
3
3
2
3
2
2
- 53 -
Revision 0.1
September 2003