K5D5657ACM Datasheet, PDF (10/74 Pages) Samsung semiconductor – 256Mb NAND and 256Mb Mobile SDRAM

K5D5657ACM-F015
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MCP MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Temperature Under Bias
Storage Temperature
Short Circuit Current
Symbol
VIN/OUT
VCC
VCCQ
TBIAS
TSTG
Ios
Rating
Unit
-0.6 to + 2.45
-0.2 to + 2.45
V
-0.2 to + 2.45
-40 to +125
°C
-65 to +150
°C
5
mA
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbo
Min
Typ.
Supply Voltage
VCC
1.7
1.8
Supply Voltage
VCCQ
1.7
1.8
Supply Voltage
VSS
0
0
Max
Unit
1.95
V
1.95
V
0
V
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Operating
Current
Sequential Read
Program
Erase
ICC1
ICC2
ICC3
tRC=50ns, CE=VIL
IOUT=0mA
-
-
-
8
15
-
8
15
mA
-
8
15
Stand-by Current(TTL)
ISB1
CE=VIH, WP=0V/VCC
-
-
1
Stand-by Current(CMOS)
ISB2
CE=VCC-0.2, WP=0V/VCC
-
10
50
Input Leakage Current
Output Leakage Current
ILI
VIN=0 to Vcc(max)
ILO
VOUT=0 to Vcc(max)
-
-
±10
µA
-
-
±10
Input High Voltage
Input Low Voltage, All inputs
I/O pins
VIH
Except I/O pins
VIL
-
VCCQ-0.4
VCC-0.4
-0.3
-
VCCQ+0.3
-
VCC+0.3
-
0.4
V
Output High Voltage Level
Output Low Voltage Level
VOH
IOH=-100µA
VOL
IOL=100uA
VCCQ-0.1
-
-
-
-
0.1
Output Low Current(R/B)
IOL(R/B) VOL=0.1V
3
4
-
mA
- 10 -
Revision 0.1
September 2003