K5D5657ACM Datasheet, PDF (62/74 Pages) Samsung semiconductor – 256Mb NAND and 256Mb Mobile SDRAM

K5D5657ACM-F015
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MCP MEMORY
Page Write Cycle at Different Bank @Burst Length=4, tRDL=2CLK
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CLOCK
CKE
HIGH
CS
RAS
CAS
*Note 2
ADDR
RAa
RAb CAa
CBb RCc
RDd CCc
CDd
BA0
BA1
A10/AP
RAa
RBb
RCc
RDd
DQ
WE
DQM
DAa0 DAa1 DAa2 DAa3 DBb0 DBb1 DBb2 DBb3 DCc0 DCc1 DDd0 DDd1 DDd2
tCDL
tRDL
*Note 1
Row Active
(A-Bank)
Write
(A-Bank)
Row Active
(B-Bank)
Write
(B-Bank)
Row Active
(D-Bank)
Row Active
(C-Bank)
Write
(C-Bank)
Write
(D-Bank)
*NOTE:
1. To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data.
2. To interrupt burst write by Row precharge, both the write and the precharge banks must be the same.
Precharge
(All Banks)
: Don’t care
- 62 -
Revision 0.1
September 2003