K5D5657ACM Datasheet, PDF (33/74 Pages) Samsung semiconductor – 256Mb NAND and 256Mb Mobile SDRAM

K5D5657ACM-F015
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MCP MEMORY
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25°C ~ 85°C for Extended, -25°C ~ 70°C for Commercial)
Parameter
Symbol
Test Condition
Version
-IL
-15
Unit Note
Operating Current
(One Bank Active)
Burst length = 1
ICC1 tRC ≥ tRC(min)
IO = 0 mA
40
40
mA 1
Precharge Standby Current in ^{ICC2P CKE ≤ VIL(max), tCC = 10ns}
power-down mode
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
0.3
mA
0.3
Precharge Standby Current
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
10
in non power-down mode
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
1
mA
Active Standby Current
in power-down mode
ICC3P CKE ≤ VIL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
5
mA
1
Active Standby Current
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
20
mA
in non power-down mode
(One Bank Active)
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
5
mA
Operating Current
(Burst Mode)
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
60
50
mA 1
Refresh Current
Self Refresh Current
ICC5 tARFC ≥ tARFC(min)
ICC6 CKE ≤ 0.2V
65
65
mA 2
TCSR Max 40°C Max 85°C °C
4 Banks
200
480
2 Banks
160
300
uA
1 Bank
130
220
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
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Revision 0.1
September 2003