English
Language : 

K5D5657ACM Datasheet, PDF (17/74 Pages) Samsung semiconductor – 256Mb NAND and 256Mb Mobile SDRAM
K5D5657ACM-F015
PrelAimdvinanacrye
MCP MEMORY
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528byte page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and read-
ing would provide significant savings in power consumption.
Figure 4. Program Operation with CE don’t-care.
CLE
CE
CE don’t-care
WE
ALE
I/Ox
80h Start Add.(3Cycle)
Data Input
Data Input
10h
tCS
CE
tCH
CE
tWP
RE
WE
I/Ox
Figure 5. Read Operation with CE don’t-care.
CLE
CE
RE
ALE
R/B
WE
I/Ox
tR
00h Start Add.(3Cycle)
- 17 -
tCEA
tREA
tOH
out
CE don’t-care
Data Output(sequential)
Revision 0.1
September 2003