K5D5657ACM Datasheet, PDF (11/74 Pages) Samsung semiconductor – 256Mb NAND and 256Mb Mobile SDRAM

K5D5657ACM-F015
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MCP MEMORY
VALID BLOCK
Parameter
Valid Block Number
Symbol
NVB
Min
2013
Typ.
-
Max
2048
Unit
Blocks
NOTE :
1. This device may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is pre-
sented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or program
factory-marked bad blocks. Refer to the attached technical notes for a appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block, does not require Error Correction.
3. The 2nd and 3rd blocks are good upon shipping.
4. Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb memory space.
AC TEST CONDITION
( Vcc=1.7V~1.95V , TA=-25 to 85°C unless otherwise noted)
Parameter
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (VccQ:1.8V +/-10%)
Value
0V to VccQ
5ns
VccQ/2
1 TTL GATE and CL=30pF
CAPACITANCE(TA=25°C, VCC=1.8V , f=1.0MHz)
Item
Symbol
Test Condition
Min
Input/Output Capacitance
CI/O
VIL=0V
-
Input Capacitance
CIN
VIN=0V
-
NOTE : Capacitance is periodically sampled and not 100% tested.
Max
10
10
MODE SELECTION
CLE ALE
CE
WE
RE
GND
H
L
L
H
X
L
H
L
H
X
H
L
L
H
X
L
H
L
H
X
L
L
L
H
L
L
L
L
H
L
X
X
X
X
X
L
X
X
X
X
X
X
X
X⁽¹⁾
X
X
X
X
X
X
H
X
X
0V
NOTE :
1. X can be VIL or VIH.
2. WP should be biased to CMOS high or CMOS low for standby.
WP
Mode
X
Command Input
Read Mode
X
Address Input(3clock)
H
Command Input
Write Mode
H
Address Input(3clock)
H Data Input
X Data Output
H During Program(Busy)
H During Erase(Busy)
L Write Protect
0V/VCC⁽²⁾ Stand-by
Program/Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Program Time
tPROG
-
200
500
Number of Partial Program Cycles
in the Same Page
Main Array
Spare Array
Nop
-
-
-
-
2
3
Block Erase Time
tBERS
-
2
3
Unit
pF
pF
Unit
µs
cycles
cycles
ms
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Revision 0.1
September 2003