K5D5657ACM Datasheet, PDF (22/74 Pages) Samsung semiconductor – 256Mb NAND and 256Mb Mobile SDRAM

K5D5657ACM-F015
PAGE PROGRAM OPERATION
PrelAimdvinanacrye
MCP MEMORY
CLE
CE
tWC
tWC
WE
ALE
tWC
tWB tPROG
RE
I/Ox
R/B
N Address
80h
Col. Add Row Add1 Row Add2
Sequential Data Column
Input Command Address
Page(Row)
Address
Din
Din
N
N+1
1 up to m Data
Serial Input
Din
528
10h
Program
Command
70h
I/O0
Read Status
Command
I/O0=0 Successful Program
I/O0=1 Error in Program
COPY-BACK PROGRAM OPERATION
CLE
CE
WE
ALE
RE
I/Ox
R/B
tWC
tWB
tR
tWB _tPROG
00h
Col. Add Row Add1 Row Add2
Column _Page(Row)
Address _Address
8Ah
A0~A7 A9~A16 A17~A24
Program Column
CommandAddress
Page(Row)
Address
70h I/O0
Read Status
Command
Busy
Busy
I/O0=0 Successful Program
I/O0=1 Error in Program
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Revision 0.1
September 2003