K5D5657ACM Datasheet, PDF (23/74 Pages) Samsung semiconductor – 256Mb NAND and 256Mb Mobile SDRAM

K5D5657ACM-F015
BLOCK ERASE OPERATION(ERASE ONE BLOCK)
PrelAimdvinanacrye
MCP MEMORY
CLE
CE
tWC
WE
ALE
tWB
tBERS
RE
I/Ox
R/B
60h
A9~A16 A17~A24
DOh
Page(Row)
Address
Auto Block Erase
Setup Command
Erase Command
Busy
MANUFACTURE & DEVICE ID READ OPERATION
70h
I/O 0
I/O0=0 Successful Erase
Read Status I/O0=1 Error in Erase
Command
CLE
CE
WE
ALE
RE
I/Ox
90h
Read ID Command
00h
Address. 1cycle
tAR
tREA
ECh
Maker Code
35h
Device Code
- 23 -
Revision 0.1
September 2003