HN29V1G91T-30 Datasheet, PDF (91/92 Pages) Renesas Technology Corp – 128M X 8-bit AG-AND Flash Memory

Rev. Date
1.00 Dec. 08, 2003
2.00 Dec. 19, 2003
3.00 Jun. 03, 2004
4.00 Jul. 20, 2004
Contents of Modification
Page Description
 Deletion of Preliminary
2
Change of the description of Wear leveling
48 Tstg: 0°C/+70°C to −25°C/+125°C
86 Notes on usage: Change of 8.

V_CC: 2.7 V/3.6 V to 3.0 V/3.6 V
48 Tstg: −25°C/+125°C to −25°C/+85°C

1, 51
8
86
V_CC: 3.0 V/3.6 V to 2.7 V/3.6 V
t_R Max (1st access time): 100µs to120µs
Program/Erase Characteristics
t_PROG Max: 1ms to 2.4ms
t_CPROG Max: 2ms to 4.8 ms
t_CBSY Max: 1000µs to 2400µs
t_BERS Max: 2.4ms to 20ms
Notes on usage: Change of 8. Notes: 2., 4.
Change of description
“The address input is necessary for RA1 and RA2. Input 00h
respectively.” to “The address input is necessary for RA1 and RA2 and
RA4. Input 00h respectively.”
“For RA3 and RA4, input 04h respectively.” to “For RA3, input 04h.”
“Before confirmation of this command, the protect operation is not
guaranteed.” to “In case of this pause, the protect operation is not
guaranteed.”
51 AC Characteristics
t_VRS Min: 20µs to 100µs
t_VRDY Max: 20µs to 100µs