HN29V1G91T-30 Datasheet, PDF (49/92 Pages) Renesas Technology Corp – 128M X 8-bit AG-AND Flash Memory

HN29V1G91T-30
DC Characteristics
(V_CC = 2.7 V to 3.6 V, Ta = 0 to +70°C)
Parameter
Operating V_CC voltage
Operating V_CC current
(Read)
Operating V_CC current
(Program)
Operating V_CC current
(Erase)
Standby current (TTL)
Symbol Min
V_CC
2.7
I_CC1

I_CC2

I_CC3

I_CC4

I_CC5

I_CC6

I_SB1

Standby current (CMOS)
I_SB2

Deep Standby current (CMOS) I_SB3

Input Leakage Current
Output Leakage Current
Input voltage
Input voltage
(RES, WP, PRE)
Output High voltage Level
Output Low voltage Level
Output Low Current (R/B)
I_Li

I_Lo

V_iH
V_iL
V_iHD
2.0
−0.3
V_CC −
0.2
V_iLD
−0.2
V_oH
2.4
V_OL

I_OL(R/B) 5
Typ Max
Unit Test conditions
3.3 3.6
V
10 20
15 30
10 20
mA t_RC = 50 ns, CE = V_iL, Iout = 0 mA
mA t_RC = 35 ns, CE = V_iL, Iout = 0 mA
mA Single Bank Operation
20 30
mA Multi Bank Operation
10 20
mA Single Bank Operation
15 30
mA Multi Bank Operation
1
mA CE = V_iH
WP = V_SS ± 0.2 V / V_CC ± 0.2 V
PRE = V_SS ± 0.2 V / V_CC ± 0.2 V
RES = V_CC ± 0.2 V
10 50
µA CE = V_CC − 0.2 V,
WP = V_SS ± 0.2 V / V_CC ± 0.2 V
PRE = V_SS ± 0.2 V / V_CC ± 0.2 V
RES = V_CC ± 0.2 V
5
µA RES = V_SS ± 0.2 V,
WP = V_SS ± 0.2 V / V_CC ± 0.2 V
PRE = V_SS ± 0.2 V/ V_CC ± 0.2 V
 ±10
µA V_in = 0 to 3.6 V
 ±10
µA V_in = 0 to 3.6 V
 V_CC + 0.3 V
 0.8
V
 V_CC + 0.2 V
 +0.2

 0.4
8
V
V I_OH = −400 µA
V I_OL = 2.1 mA
mA V_OL = 0.4 V
Rev.4.00, Jun.20.2004, page 49 of 89