HN29V1G91T-30 Datasheet, PDF (29/92 Pages) Renesas Technology Corp – 128M X 8-bit AG-AND Flash Memory

HN29V1G91T-30
Program Data Input in Erase Busy
Program Data input in Erase Busy enables to program the data of any page address during busy status in
erase operation.
It is possible to program the data in both block erase mode and multi bank block erase mode if they are in
busy state.
There is no restriction between page address for programming and block for erase.
It needs 1µs wait time after the erase status becomes busy to write 80h command for program address and
data input.
It can confirm the status by writing 70h or 71h command after program data input.
The input data is possible to input in both single bank and multi bank mode and corresponds to the data
input mode specifying column address in same page address. It needs to keep 4µs or more from writing
11h command to writing 80h command when the data to a multiple bank is programmed. 10h command
(program start command) must be issued after completion of erase operation.
Program data input in single bank
Note: 1. Status command available
Program data input with random data mode in single bank mode
Note: 1. Status command available
Rev.4.00, Jun.20.2004, page 29 of 89