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| HN29V1G91T-30 Datasheet, PDF (48/92 Pages) Renesas Technology Corp – 128M X 8-bit AG-AND Flash Memory | |||
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HN29V1G91T-30
Absolute Maximum Ratings
Parameter
Symbol
Value
VCC voltage
VSS voltage
All input and output voltage
Operating temperature range
VCC
VSS
Vin, Vout
Topr
â0.6 to +4.6
0
â0.6 to +4.6
0 to +70
Storage temperature range
Tstg
â25 to +85
Notes: 1. Relative to VSS.
2. Vin/Vout = â2.0 V for pulse width with 20ns or less.
3. Device Storage temperature before programming.
Unit
V
V
V
°C
°C
Notes
1
1, 2
3
Capacitance
Parameter
Input capacitance
Output capacitance
Symbol Min
Typ
Max Unit Test conditions
Cin


6
pF Vin = 0 V, Ta = +25°C, f = 1 MHz
Cout


10 pF Vout = 0 V, Ta = +25°C, f = 1
MHz
Valid Block
Parameter
Symbol
Min
Typ
Valid Block Number
Bank0
Bank1
Bank2
Bank3
NVB0
NVB1
NVB2
NVB3
8029

8029

8029

8029

Max
8192
8192
8192
8192
Unit
blocks
blocks
blocks
blocks
Spare Block
Parameter
Symbol
Min
Typ
Max
Unit
Spare Block Number Bank0 NSB0
145


blocks
Bank1 NSB1
145


blocks
Bank2 NSB2
145


blocks
Bank3 NSB3
145


blocks
Rev.4.00, Jun.20.2004, page 48 of 89
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