HN29V1G91T-30 Datasheet, PDF (50/92 Pages) Renesas Technology Corp – 128M X 8-bit AG-AND Flash Memory

HN29V1G91T-30
AC Characteristics
(V_CC = 2.7 V to 3.6 V, Ta = 0 to +70°C)
Test Conditions
• Input pulse levels: 0.4 to 2.4 V
• Input rise and fall time: 3 ns
• Input and output timing levels: 1.5 V / 1.5 V
• Output load: 1TTL GATE and 50 pF (3.0 V ± 10%)
1TTL GATE and 100 pF (3.3 V ± 10%)
AC Timing Characteristics for Command / Address / Data Input
Parameter
Symbol Min
Typ
Max
Unit
Note
CLE Setup Time
t_CLS
0


ns
CLE Hold Time
t_CLH
9


ns
CE Setup Time
t_CS
0


ns
CE Hold Time
t_CH
6


ns
WE Pulse Width
t_WP
15


ns
1
ALE Setup Time
t_ALS
0


ns
ALE Hold Time
t_ALH
6


ns
Data Setup Time
t_DS
9


ns
Data Hold Time
t_DH
9


ns
Write cycle Time
t_WC
33


ns
WE High Hole Time
t_WH
12


ns
CE High to WE low setup time t_CHWS 5


ns
WE High to CE low hold time t_WHCH 5


ns
CE High to RE low setup time t_CHRS
5


ns
RE High to CE low hold time
t_RHCH
5


ns
Note: 1. If t_CS is set less than 5 ns, t_WP must be minimum 20 ns. Otherwise, t_WP is minimum 15 ns.
Rev.4.00, Jun.20.2004, page 50 of 89