HN29V1G91T-30 Datasheet, PDF (16/92 Pages) Renesas Technology Corp – 128M X 8-bit AG-AND Flash Memory

HN29V1G91T-30
Page Program Random Data input in a Page
This operation enables to input the program data in the Page address randomly writing 85h command with
two column address input on the way to the program operation in the Page program mode.
It can input the data by specifying a column address in the same page which you want to program the data
using this mode.
After completion of the data input, program it to the specified column address is executed automatically by
writing 10h command (Program start command). Program operation must be executed to a Page address
which the data is erased.
A number of additional program in the same Page address is maximum 8 times.
The data of 1 byte or more need to be input when it is in random data input.
CLE
CE
WE
ALE
RE
I/O
Column Page
address L address N
80h CA1 CA2 RA1 RA2
D_IN D_IN
R/B
Column
address M
D_IN 85h CA1 CA2 D_IN D_IN
D_IN 10h
70h status
t_PROG
Memory array _Program
Data register
L
M
Page N
Rev.4.00, Jun.20.2004, page 16 of 89