HN29V1G91T-30 Datasheet, PDF (18/92 Pages) Renesas Technology Corp – 128M X 8-bit AG-AND Flash Memory

HN29V1G91T-30
Multi Bank Page Program Random Data Input in a Page
This mode enables to input program data specifying an address in a page which the data is programmed
when it is in Multi Bank Page Program operation. The data can be input serially by writing 85h command
with column address to on the way to the data input to the page address to be programmed as well as
random data input in page mode. After the data input, program and address/data input to next bank is
executed by writing 11h command (dummy command) and then 80h command as well as Multi Bank Page
Program.
Program operation to several banks specified automatically is executed simultaneously by writing 10h
command (program start command) after the completion of data input to the final bank.
Address of the random data can be set in every page for program freely.
R/B
I/O
column J page N
80h CA1 CA2 RA1 RA2 Di_In_N
column J’
D_IN 85h CA1 CA2 D_IN
t_DBSY
(A)
D_IN 11h
(B)
(1) _Bank0
R/B ^(A)
column K page P
I/O ^(B) 80h CA1 CA2 RA1 RA2 Di_In_N
column K’
D_IN 85h CA1 CA2 D_IN
t_DBSY
(C)
D_IN 11h
(D)
(2) Bank1
R/B (C)
column L page Q
I/O ^{(D) 80h CA1 CA2 RA1 RA2 Di}IⁿN
column L’
D_IN 85h CA1 CA2 D_IN
t_DBSY
(E)
D_IN 11h
(F)
(3) Bank2
R/B ^(E)
column M page R
I/O ^{(F) 80h CA1 CA2 RA1 RA2 Di}IⁿN
column M’
D_IN 85h CA1 CA2 D_IN
(4) Bank3
t_PROG
D_IN 10h
(5)
71h
status
out
Bank 0
Memory array
Page N
Program ₍₅₎
Data register
column J
column J’
(1)
Bank 1
Page P
Program ₍₅₎
column K column K’
(2)
Bank 2
Page Q
Program (5)
column L column L’
(3)
Bank 3
Page R
Program ⁽⁵⁾
column M column M’
(4)
Rev.4.00, Jun.20.2004, page 18 of 89