HN29V1G91T-30 Datasheet, PDF (1/92 Pages) Renesas Technology Corp – 128M X 8-bit AG-AND Flash Memory

HN29V1G91T-30
128M × 8-bit AG-AND Flash Memory
REJ03C0056-0400Z
Rev. 4.00
Jul.20.2004
Description
The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's
previous multi level cell Flash memory, using 0.13µm process technology and AG-AND (Assist Gate-
AND) type Flash memory cell using multi level cell technology provides both the most cost effective
solution and high speed programming.
Features
• On-board single power supply: V_CC = 2.7 V to 3.6 V
• Operation Temperature range: Ta = 0 to +70°C
• Memory organization
 Memory array: (2048+64) bytes × 16384 page × 4 Bank
 Page size: (2048+64) bytes
 Block size: (2048+64) bytes × 2 page
 Page Register: (2048+64) bytes × 4 Bank
• Multi level memory cell
 2bit/cell
• Automatic program
 Page program
 Multi bank program
 Cache program
 2 page cache program
• Automatic Erase
 Block Erase
 Multi Bank Block Erase
• Access time
 Memory array to register (1st access time): 120 µs max
 Serial access: 35 ns min
Rev.4.00, Jul.20.2004, page 1 of 89