HN29V1G91T-30 Datasheet, PDF (27/92 Pages) Renesas Technology Corp – 128M X 8-bit AG-AND Flash Memory

HN29V1G91T-30
Data Recovery Program
Data recovery program enables to re-program the program data itself which is transferred from external to
different page address in same bank. Program to newly specified page address is executed by writing 10h
command following 85h command and address for re-programming with 4 cycles as well as copy back
program. Same page address cannot be chosen during this operation.
It is possible to update the re-program data by inputting the data after specifying address for re-
programming.
Address for re-programming must be chosen page address which has erased (FFh).
tPROG
R/B
I/O
10h
Page M
(1)
column K Page N
85h CA1 CA2 RA1 RA2
(2)
tPROG
10h
70h
status
out
Memory array
Program
(1)
Page M
Memory array
Data register
Data register
Note: 1. Page M and Page N are different page address.
Page N
Program ⁽²⁾
tPROG
R/B
column K page N
I/O 10h 85h CA1 CA2 RA1 RA2 D_IN
(1)
(2)
column L
D_IN 85h CA1 CA2 D_IN
(3)
tPROG
D_IN 10h
70h
status
out
(4)
Memory array
Program
(1)
Data register
Page M
Memory array
Data register
Din
Din
column K column L
(2)
(3)
Note: 1. Page M and Page N are different page address.
Memory array
Data register
Page N
Program (4)
It is possible to combine erasing the data of the block with re-programming, as shown below, in the data
recovery program operation.
Rev.4.00, Jun.20.2004, page 27 of 89