HN29V1G91T-30 Datasheet, PDF (28/92 Pages) Renesas Technology Corp – 128M X 8-bit AG-AND Flash Memory

HN29V1G91T-30
To program, update the data next, then erase, and then re-programming.
R/B
I/O
R/B
I/O
80h CA × 2 RA × 2 Data 10h
Program1
1
tPROG
Status
Check
85h CA × 2 RA × 2 Data
85h CA × 2 Data
2
*1 Program 1 data update specify a page program
tBERS
tPROG
60h RA × 2 D0h
3 Erase
Specify a page in the same bank
same as RA in setting 1.
Status
Check
85h CA × 2 RA × 2
Specify the address for
re-programming (same as *1)
4 Program2
10h
Program2 Start
70h
Program
Status
1
2
Page M
3
4
Page N, N+4
Program1
80h−CA1−RA1−Data−10h
RA1 = PageM
col.K col.L
data update
85h−CA2−RA2−Data−85h−CA3−Data
RA2 = PageN
CA2 = col.K
CA3 = col.L
Erase
60h−RA2−D0h
Program2
85h−CA2−RA2−10h
To program, erase next, then update the data, and then re-programming.
R/B
I/O
R/B
I/O
tPROG
80h CA × 2 RA × 2 Data 10h
Program1 *1
1
tBERS
70h
Status
out
60h RA × 2 D0h
Erase
2
Within the same bank
as the page specified in *1
tPROG
70h
Status
out
85h CA × 2 RA × 2 Data
85h CA × 2 Data 10h
3 Program
Specify the address for re-programming
(in the same bank as *1)
4 Program2 Start
70h
Status
out
1
Page M
2
Page N
3
4
Program1
80h−CA1−RA1−Data−10h
RA1 = PageM
Erase
60h−RA2−D0h
col.K col.L
data update
85h−CA2−RA2−Data−85h−CA3−Data
RA2 = PageN
CA2 = col.K
CA3 = col.L
Program2
10h
Rev.4.00, Jun.20.2004, page 28 of 89