HN29V1G91T-30 Datasheet, PDF (90/92 Pages) Renesas Technology Corp – 128M X 8-bit AG-AND Flash Memory

Revision History
HN29V1G91T-30 Data Sheet
Rev. Date
0.01 Jun. 19, 2003
0.02 Oct. 06, 2003
0.03 Nov. 28, 2003
Contents of Modification
Page Description
 Initial issue
2
Add the explanation to the block replacement
7
Add the note for Power on auto Read Enable using
9
Add the Device Recovery
28 Add the two figures
31 Add the correspondence when the erase error occurred in Program Data
input in Erase Busy mode
48 Change degree of Storage Temperature range
49 Change I_OL (R/B) Min 8 to 5
50
Add to the AC character, t_CHWS, t_WHCH, t_CHRS, t_RHCH
51
Add to the AC character, t_WWS, t_WWH, t_CSD
88 Add the four items to the Notes on usage, No10 to 13
2
Change of the description of transfer rate
2
Change of Operating voltage
3
Change of the figure of Pin Arrangement
6
Change of the description of Chip Enable
10 Change of the description of Page Read
13 Change of the figure of Multi Bank Read
17 Change of the figure of Multi Bank Page Program
18 Change of the figure of Multi Bank Page Program Random Data Input in
a Page
21 Change of the figure of Copy Back Program
22 Change of the figure of Copy Back Program with Random Data Input in
a Page
26 Change of the figure of Data Recovery Read
28 Change of the figure of To program, erase next, then update the data,
and then re-programming.
31 Change of the figure of Program Data input in Erase Busy (recommend
pattern when error occurred) Multi Bank Mode
35 Change of 70h command status in single bank operation
39 Change of 71h command status in 2page cache program operation
40 Change of 73h, 74h, 75h, 76h command status in Cache program/2page
cache program operation
41 Change of the figure of Reset operation in the Cache program (R/B =
Ready, True R/B = Busy)
41 Change of the figure of Reset operation in the Erase Verify
42 Change of the figure of Reset operation in the Program
43 Change of the figure of Reset operation in the Erase
43 Change of the figure of Reset operation in the Read
49
I_SB1, I_SB2, I_SB3: Change of Test conditions
49 I_OL(R/B) Typ: 10 mA to 8 mA
50 t_WP: Addition of Note1
51
t_VRS, t_BSY: Change of Unit
57 Change of the figure of Read Operation (Intercepted by CE)
63 Change of the figure of Multi Bank Program (2/2)
84 Change of the figure of Deep Standby Mode
85 Notes on usage: Change of 1., 2.