4513_03 Datasheet, PDF (172/210 Pages) Renesas Technology Corp – 4-BIT SINGLE-CHIP MICROCOMPUTER

APPENDIX
3.1 Electrical characteristics
3.1.3 Electrical characteristics
Table 3.1.4 Electrical characteristics
(Mask ROM version:Ta = –20 °C to 85 °C, VDD = 2.0 V to 5.5 V, unless otherwise noted)
(One Time PROM version:Ta = –20 °C to 85 °C, VDD = 2.5 V to 5.5 V, unless otherwise noted)
Symbol
Parameter
Test conditions
VOH
“H” level output voltage P5
VOL
“L” level output voltage P0, P1, P4, P5
VOL
“L” level output voltage P3, RESET
VOL
“L” level output voltage D6, D7
VOL
“L” level output voltage D0–D5
“H” level input current
IIH
P0, P1, P2, P3, P4, P5, RESET, VDCE
IIH
“H” level input current D0–D7
“L” level input current
IIL
P0, P1, P2, P3, P4, P5, RESET, VDCE
IIL
“L” level input current D0–D7
at active mode
IDD
Supply current
at RAM back-up mode
RPU
Pull-up resistor value
Hysteresis INT0, INT1, CNTR0, CNTR1,
VT+ – VT–
SIN, SCK
VT+ – VT– Hysteresis RESET
VDD = 5 V
IOH = –10 mA
VDD = 3 V
IOH = –5 mA
VDD = 5 V
IOL = 12 mA
VDD = 3 V
IOL = 6 mA
VDD = 5 V
IOL = 5 mA
VDD = 3 V
IOL = 2 mA
VDD = 5 V
IOL = 30 mA
IOL = 10 mA
VDD = 3 V
IOL = 15 mA
IOL = 5 mA
VDD = 5 V
IOL = 15 mA
VDD = 3 V
IOL = 3 mA
VI = VDD, port P4 selected,
port P5: input state
VI = 12 V
VI = 0 V No pull-up of ports P0 and P1,
port P4 selected, port P5: input state
VI = 0 V
VDD = 5 V
f(XIN) = 4.0 MHz
Middle-speed mode
f(XIN) = 400 kHz
VDD = 3 V
f(XIN) = 4.0 MHz
Middle-speed mode
f(XIN) = 400 kHz
VDD = 5 V
f(XIN) = 4.0 MHz
High-speed mode
f(XIN) = 400 kHz
VDD = 3 V
f(XIN) = 2.0 MHz
High-speed mode
f(XIN) = 400 kHz
Ta = 25 °C
VDD = 5 V
VDD = 3 V
VDD = 5 V
VDD = 3 V
VI = 0 V
VDD = 5 V
VDD = 3 V
VDD = 5 V
VDD = 3 V
Limits
Unit
Min. Typ. Max.
3
V
2
2
V
0.9
2
V
0.9
2
V
0.9
2
V
0.9
2
V
0.9
1
µA
1
µA
–1
µA
–1
µA
1.8 5.5
0.5 1.5
0.9 2.7
0.2 0.6
3.0 9.0 ^mA
0.6 1.8
0.9 2.7
0.3 0.9
0.1 1
10 µA
6
20 50 125
40 100 250 ^kΩ
0.3
0.3
V
1.5
0.6
V
4513/4514 Group User’s Manual
3-5