SE97 Datasheet, PDF (40/54 Pages) NXP Semiconductors – DDR memory module temp sensor with integrated SPD, 3.3 V

NXP Semiconductors
SE97
DDR memory module temp sensor with integrated SPD, 3.3 V
25
I_{OL(sink)(SDA)}
(mA)
20
V_DD = 3.6 V
15
3.0 V
10
5
0
−40
0
40
V_OL2 = 0.6 V.
Fig 31. SDA output current
140
T_conv
(ms)
120
002aac907
80
120
T_amb (°C)
002aac909
100
80
60
−40
0
40
V_DD = 3.0 V to 3.6 V.
Fig 33. Conversion period
80
120
T_amb (°C)
3.0
V_th
(V)
2.8
002aac903
2.6
2.4
2.2
2.0
−40
0
40
80
120
T_amb (°C)
For temp sensor conversion.
V_DD = 3.0 V to 3.6 V.
Fig 35. Average power-on threshold voltage
15
conversion rate
(conv/s)
13
11
9
7
5
−40
0
40
V_DD = 3.0 V to 3.6 V.
Fig 32. Conversion rate
5
T_cy(W)
(ms)
4
002aac908
80
120
T_amb (°C)
002aac902
3
2
−40
0
40
80
120
T_amb (°C)
V_DD = 3.0 V to 3.6 V.
Fig 34. EEPROM write cycle time
1.6
V_th
(V)
1.4
002aac904
1.2
1.0
−40
0
40
80
120
T_amb (°C)
For EEPROM read operation.
V_DD = 1.7 V to 3.6 V.
Fig 36. Average power-on threshold voltage
SE97_5
Product data sheet
Rev. 05 — 6 August 2009
© NXP B.V. 2009. All rights reserved.
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