SE97 Datasheet, PDF (36/54 Pages) NXP Semiconductors – DDR memory module temp sensor with integrated SPD, 3.3 V

NXP Semiconductors
SE97
DDR memory module temp sensor with integrated SPD, 3.3 V
V_OL(SDA) = LOW-level output voltage on pin SDA
V_OL(EVENT) = LOW-level output voltage on pin EVENT
I_{OL(sink)(SDA)} = SDA output current LOW
I_{OL(sink)EVENT} = EVENT output current LOW
Calculation example:
T_amb (typical temperature inside the notebook) = 50 °C
I_DD(AV) = 400 µA
V_DD = 3.6 V
Maximum V_OL(SDA) = 0.4 V
I_{OL(sink)(SDA)} = 1 mA
V_OL(EVENT) = 0.4 V
I_{OL(sink)EVENT} = 3 mA
R_th(j-a) of HVSON8 = 56 °C/W
R_th(j-a) of TSSOP8 = 160 °C/W
Self heating due to power dissipation for HVSON8 is:
∆T = 56 × [(3.6 × 0.4) + (0.4 × 3) + (0.4 × 1)]= 56 °C ⁄ W × 3.04 mW = 0.17 °C
(2)
Self heating due to power dissipation for TSSOP8 is:
∆T = 160 × [(3.6 × 0.4) + (0.4 × 3) + (0.4 × 1)] = 160 °C ⁄ W × 3.04 mV = 0.49 °C
(3)
10. Limiting values
Table 27. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DD
V_n
V_A0
I_sink
T_j(max)
T_stg
supply voltage
voltage on any other pin
SDA, SCL, EVENT pins
voltage on pin A0
overvoltage input; A0 pin
sink current
at SDA, SCL, EVENT pins
maximum junction temperature
storage temperature
Min Max Unit
−0.3 +4.2 V
−0.3 +4.2 V
−0.3 +12.5 V
−1
+50.0 mA
-
150 °C
−65 +165 °C
SE97_5
Product data sheet
Rev. 05 — 6 August 2009
© NXP B.V. 2009. All rights reserved.
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