SE97 Datasheet, PDF (39/54 Pages) NXP Semiconductors – DDR memory module temp sensor with integrated SPD, 3.3 V

NXP Semiconductors
SE97
DDR memory module temp sensor with integrated SPD, 3.3 V
500
I_DD(AV)
(µA)
400
300
200
002aac910
V_DD = 3.6 V
3.0 V
100
0
−40
0
40
80
120
T_amb (°C)
I²C-bus and EEPROM inactive.
Fig 25. Average supply current
5
I_sd(VDD)
(µA)
3
002aac911
V_DD = 3.6 V
1
3.0 V
−1
−40
0
40
80
120
T_amb (°C)
I²C-bus, temp sensor and EEPROM inactive.
Fig 26. Shutdown supply current
600
I_DD(AV)
(µA)
500
400
300
002aac912
V_DD = 3.6 V
3.0 V
3.5
T_lim(acc)
(°C)
2.0
1.0
0
−1.0
−2.0
002aad769
200
−40
0
40
80
120
T_amb (°C)
−3.5
−50 −25 0
25 50 75 100 125
T_amb (°C)
Temp sensor and EEPROM active.
Fig 27. Average supply current during EEPROM write
V_DD = 3.0 V to 3.6 V.
Fig 28. Typical temperature accuracy
8.0
I_OL
(mA)
6.0
4.0
2.0
002aad258
V_DD = 3.0 V to 3.6 V
V_DD = 1.7 V
0
−50 −25 0
25 50 75 100 125
T_amb (°C)
V_OL1 = 0.4 V.
Fig 29. EVENT output current SE97PW, SE97TK
30
I_{OL(sink)EVENT}
(mA)
20
002aad767
10
V_DD = 3.7 V
3.3 V
2.9 V
1.7 V
0
−50 −25 0
25 50 75 100 125
T_amb (°C)
V_OL1 = 0.4 V.
Fig 30. EVENT output current SE97TL, SE97TP
SE97_5
Product data sheet
Rev. 05 — 6 August 2009
© NXP B.V. 2009. All rights reserved.
39 of 54