HYE18P32160AC Datasheet, PDF (8/53 Pages) Infineon Technologies AG – 32M Synchronous Burst CellularRAM

32M Synchronous Burst CellularRAM
CellularRAM
HYE18P32160AC(-/L)9.6
HYE18P32160AC(-/L)12.5
HYE18P32160AC(-/L)15
1
Overview
1.1
Features
• High density (1T1C-cell) Synchronous 32-Mbit Pseudo-Static RAM
• Designed for cell phone applications (CellularRAM)
• Functional-compatible (Asynchronous mode) to conventional low power asynchronous SRAM devices
• Organization 2M × 16
• Refresh-free operation
• 1.8 V single power supply (V_DD and V_DDQ)
• Low power optimized design
– I_STANDBY = 90 µA (for L-part¹⁾) or 120uA (for standard part), data retention mode
– I_DPD = < 25 µA (32M), non-data retention mode
• Low power features (partly adopted from the JEDEC standardized low power SDRAM specifications)
– Temperature Compensated Self-Refresh (TCSR)
– Partial Array Self-Refresh (PASR)
– Deep Power Down Mode (DPD)
• User configurable interface supporting three different access protocols (values from 9.6 part)
– asynchronous SRAM protocol, 70 ns random access cycle time, 20 ns page mode (read only) cycle time
– NOR-Flash burst protocol, 70 ns write cycle time, 104 MHz burst mode read cycle
– synchronous (bi-directional) interface protocol, 70 ns random cycle time, 104 MHz burst mode read/write
cycle
• In NOR-Flash burst or in synchronous mode the additional user settings are featured
– programmable fixed burst length of 4/8/16 words or continuous burst mode
– programmable latency modes to adjust the desired burst frequency
– wrap mode function
– programmable WAIT signal polarity and timing
• Byte read/write control by UB/LB (Asynchronous mode and in synchronous burst read)
• Synchronous Data Input Mask function supported by UB/LB in synchronous burst write mode
• Wireless operating temperature range from -25 °C to +85 °C
• P-VFBGA-54 chip-scale package (9 × 6 ball grid)
Table 1 Product Selection
HYE18P32160AC
Maximum Input CLK frequency Lat = 2
(MHz)
Lat = 3
Min. Random Cycle time (t_RC)
Stand-by current (I_CC2)
1) Contact Factory
L9.6¹⁾
-9.6
66
104
70 ns
90µA 120µA
L12.5¹⁾ -12.5
50
80
70 ns
90µA 120µA
L15¹⁾
-15
40
66
85 ns
90µA 120µA
HYE 18 P 3216 0 A C
Extended Temp. part
32M (x16 Org)
Chip Scale Package
Design Revision number
V_DD = 1.8 V typ.
PSRAM product
Device Type
0: standard (54-ball)
Data Sheet
8
V2.0, 2003-12-16