HYE18P32160AC Datasheet, PDF (42/53 Pages) Infineon Technologies AG – 32M Synchronous Burst CellularRAM

HYE18P32160AC(-/L)9.6/12.5/15
32M Synchronous Burst CellularRAM
Functional Description
Table 16 Timing Parameters - Asynchronous Write With ADV Control (cont’d)
Parameter
Symbol
9.6, 12.5
15
Min. Max. Min. Max.
CS high time (asynch_write, mixed) t_CPH
Write recovery time
t_WR
Data setup to WE high
t_DS
Data hold from WE high
t_DH
CRE setup to ADV high
t_CRS
CRE hold from ADV high
t_CRH
10
–
15
–
0
–
0
–
20
–
20
–
0
–
0
–
10
–
10
–
5
–
5
–
Unit
ns
ns
ns
ns
ns
ns
Note: 1. t_WR is valid only when ADV latch of address does not take place until the end of write.
Notes
–
1
–
–
–
–
Data Sheet
42
V2.0, 2003-12-16