HYE18P32160AC Datasheet, PDF (47/53 Pages) Infineon Technologies AG – 32M Synchronous Burst CellularRAM

HYE18P32160AC(-/L)9.6/12.5/15
32M Synchronous Burst CellularRAM
Electrical Characteristics
3
Electrical Characteristics
3.1
Absolute Maximum Ratings
Table 18 Absolute Maximum Ratings
Parameter
Symbol
Operating temperature range
Storage temperature range
Soldering peak temperature (10 s)
Voltage of V_DD supply relative to V_SS
Voltage of V_DDQ supply relative to V_SS
Voltage of any input relative to V_SS
Power dissipation
Short circuit output current
T_C
T_STG
T_Sold
V_DD
V_DDQ
V_IN
P_D
I_OUT
Limit Values
Min.
Max.
-25
+85
-55
+150
–
260
-0.3
+2.45
-0.3
+3.6
-0.3
+3.6
–
180
-50
+50
Unit Notes
°C –
°C –
°C –
V–
V–
V–
mW –
mA –
Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit.
3.2
Recommended Power & DC Operation Ratings
All values are recommended operating conditions unless otherwise noted.
Table 19 Recommended DC Operating Conditions
Parameter
Symbol
Limit Values
Unit
Min.
Typ.
Max.
Power supply voltage, core
Power supply voltage, 1.8 V I/Os
Input high voltage
Input low voltage
V_DD
V_DDQ
V_IH
V_IL
1.7
1.8
1.95
V
1.7
1.8
2.25
V
V_DDQ – 0.4
–
V_DDQ + 0.2 V
-0.2
–
0.4
V
Notes
–
–
–
–
Table 20 DC Characteristics
Parameter
Output high voltage (I_OH = -0.2 mA)
Output low voltage (I_OL = 0.2 mA)
Input leakage current
Output leakage current
Symbol
V_OH
V_OL
I_LI
I_LO
Limit Values
Unit
Min.
Typ.
Max.
V_DDQ × 0.8
–
–
V
–
–
V_DDQ × 0.2 V
–
–
1
µA
–
–
1
µA
Notes
–
–
–
–
Data Sheet
47
V2.0, 2003-12-16