HYE18P32160AC Datasheet, PDF (48/53 Pages) Infineon Technologies AG – 32M Synchronous Burst CellularRAM

HYE18P32160AC(-/L)9.6/12.5/15
32M Synchronous Burst CellularRAM
Electrical Characteristics
Table 21 Operating Characteristics
Parameter
Symbol
9.6
12.5
15
Unit Test
Min. Max. Min. Max. Min. Max.
Condition
Notes
Operating Current
• Async read/write random @t_RCmin I_DD1
–
• Async read/write random @t_RC=1µs I_DD1L
–
• Async Page read
I_DD1P
–
• Sync burst (continuous)
I_DD4
–
• Burst Initial access
I_DD5
–
20 –
5
–
15 –
20 –
35 –
20 –
5
–
15 –
18 –
35 –
mA V_in = V_DD or V_SS, ¹⁾
17
Chip enabled,
5
I_out = 0
12
15
30
Stand-By Current : L-part
I_DD2
–
90 –
90 –
90
µA V_in = V_DD or
–
Stand-By Current : Standard
–
120 –
120 –
120 µA ^VSS,Chip
–
deselected,
(Full array)
Deep Power Down Current
I_DD3
–
25 –
25 –
25 µA V_in = V_DD or V_SS –
1) The specification assumes the output disabled.
3.3
Output Test Conditions
DUT
VDDQ
5.4kOhm
5.4kOhm
30pF
Test point
Figure 29 Output Test Circuit
Please refer to section Section 2.9.
3.4
Pin Capacitances
Table 22 Pin Capacitances
Pin
A20 - A0, CS, OE, WE, UB, LB, CRE, ADV
CLK
DQ15 - DQ0
WAIT
Limit Values
Unit
Min.
Max.
–
5.0
pF
–
5.0
pF
–
6.0
pF
–
6.0
pF
Condition
T_A = +25 °C
freq. = 1 MHz
V_pin = 0 V
(sampled, not 100%
tested)
Data Sheet
48
V2.0, 2003-12-16