1EDI2002AS_15 Datasheet, PDF (127/147 Pages) Infineon Technologies AG – Single Channel Isolated Driver for Inverter Systems AD Step

5
Specification
EiceDRIVER™ SIL
1EDI2002AS
Specification
5.1
Typical Application Circuit
Table 5-1 Component Values
Parameter
Symbol
Values
Unit
Min. Typ. Max.
Decoupling Capacitance
C_d
2 x 0.5 11
-
µF
(Between VEE2 and GND2)
Decoupling Capacitance
C_d
-
11
-
µF
(Between VCC2 and GND2)
Decoupling Capacitance
C_d
-
11
-
µF
(Between VCC1 and GND1)
Series Resistance
R_s1
0
1
-
kΩ
Pull-up Resistance
R_pu1
-
10
-
kΩ
Filter Resistance
R₁
-
1
-
kΩ
Filter Capacitance
C₁
-
47
-
pF
Reference Resistance
R_ref1
-
26.7¹⁾ -
kΩ
Reference Capacitance
C_ref1
-
100 -
pF
Pull-up Resistance
R_pu2
-
10
-
kΩ
Reference Resistance
R_ref2
-
23.7 -
kΩ
Reference Capacitance
C_ref2
-
100 -
pF
DESAT filter Resistance
R_desat
1
3
-
kΩ
DESAT filter Capacitance C_desat
-
n/a
-
nF
DESAT Diode
D_desat
-
n/a
-
-
OSD Filter Resistance
R_osd
-
1
-
kΩ
OSD Filter Capacitance
C_osd
-
47
-
pF
Sense Resistance
R_sense
-
n/a
-
Ω
Note / Test Condition
10µF capacitance next to the
power supply source (e.g. flyback
converter). 1 µF close to the
device. It is strongly
recommended to have at least
two capacitances close to the
device (e.g. 2 x 500nF).
10µF capacitance next to the
power supply source (e.g. flyback
converter). 1 µF close to the
device.
10µF capacitance next to the
power supply source (e.g. flyback
converter). 1 µF close to the
device.
high accuracy, as close as
possible to the device
As close as possible to the device.
high accuracy, as close as
possible to the device
As close as possible to the device.
Depends on required response
time.
Depends on required response
time.
HV diode.
Depends on IGBT specification.
Datasheet
127
Hardware Description
Rev. 3.1, 2015-07-30