MC68HC912BL16 Datasheet, PDF (51/128 Pages) Freescale Semiconductor, Inc – 16-Bit Microcontroller

Freescale Semiconductor, Inc.
EEPROT — EEPROM Block Protect
Bit 7
6
5
STPROT
1
1
RESET:
1
1
1
$00F1
4
3
2
1
Bit 0
1
BPROT3 BPROT2 BPROT1 BPROT0
1
1
1
1
1
Prevents accidental writes to EEPROM. Read anytime. Write anytime if EEPGM = 0 and PROTLCK = 0.
STPROT — Shadow and Test Row Protection
0 = Shadow and test rows can be programmed and erased.
1 = Shadow and test rows are protected from being programmed and erased.
This bit cannot be modified while programming is taking place (EEPGM = 1).
BPROT[4:0] — EEPROM Block Protection
0 = Associated EEPROM block can be programmed and erased.
1 = Associated EEPROM block is protected from being programmed and erased.
Cannot be modified while programming is taking place (EEPGM = 1).
Table 15 512-Byte EEPROM Block Protection
Bit Name
BPROT3
BPROT2
BPROT1
BPROT0
Block Protected
$0E00 to $0EFF
$0F00 to $0F7F
$0F80 to $0FBF
$0FC0 to $0FFF
Block Size
256 Bytes
128 Bytes
64 Bytes
64 Bytes
EETST — EEPROM Test
Bit 7
6
5
4
3
2
EEODD EEVEN MARG EECPD EECPRD
0
RESET:
0
0
0
0
0
0
1
EECPM
0
Bit 0
0
0
$00F2
Read anytime. Write in special modes only (SMODN = 0). These bits are used for test purposes only.
In normal modes the bits are forced to zero.
EEODD — Odd Row Programming
0 = Odd row bulk programming/erasing is disabled.
1 = Bulk program/erase all odd rows.
Refers to a physical location in the array rather than an odd byte address.
EEVEN — Even Row Programming
0 = Even row bulk programming/erasing is disabled.
1 = Bulk program/erase all even rows.
Refers to a physical location in the array rather than an even byte address.
MARG — Program and Erase Voltage Margin Test Enable
0 = Normal operation.
1 = Program and erase margin test.
This bit is used to evaluate the program/erase voltage margin.
EECPD — Charge Pump Disable
0 = Charge pump is turned on during program/erase.
1 = Disable charge pump.
MC68HC912BL16TS/D
For More Information On This Product,
51
Go to: www.freescale.com