W29N02GVSIAA Datasheet, PDF (74/79 Pages) Winbond – W29N02GV 2G-BIT 3.3V NAND FLASH MEMORY

W29N02GV
Figure 12-2 Bad block Replacement
Note:
1. An error happens in the nth page of block A during program or erase operation.
2. Copy the data in block A to the same location of block B which is valid block.
3. Copy the nth page data of block A in the buffer memory to the nth page of block B
4. Creating or updating bad block table for preventing further program or erase to block A
.
12.4 Addressing in program operation
The pages within the block have to be programmed sequentially from LSB (least significant bit) page
to the MSB (most significant bit) within the block. The LSB is defined as the start page to program,
does not need to be page 0 in the block. Random page programming is prohibited.
Release Date: February 1^st, 2016
74
– Revision B