W29N02GVSIAA Datasheet, PDF (73/79 Pages) Winbond – W29N02GV 2G-BIT 3.3V NAND FLASH MEMORY

W29N02GV
Figure 12-1 flow chart of create initial invalid block table
12.3 Error in operation
Additional invalid blocks may develop in the device during its life cycle. Following the procedures
herein is required to guarantee reliable data in the device.
After each program and erase operation, check the status read to determine if the operation failed. In
case of failure, a block replacement should be done with a bad-block management algorithm. The
system has to use a minimum 1-bit ECC per 528 bytes of data to ensure data recovery.
Operation
Erase
Program
Read
Detection and recommended procedure
Status read after erase  Block Replacement
Status read after program  Block Replacement
Verify ECC  ECC correction
Table 12-2 Block failure
Release Date: February 1^st, 2016
73
– Revision B