W29N02GVSIAA Datasheet, PDF (57/79 Pages) Winbond – W29N02GV 2G-BIT 3.3V NAND FLASH MEMORY

W29N02GV
10.4 DC Electrical Characteristics (3.3V)
PARAMETER
SYMBOL
CONDITIONS
SPEC
MIN
TYP
Sequential Read current
Icc1
tRC= tRC MIN
#CE=VIL
IOUT=0mA
-
25
Program current
Icc2
-
-
25
Erase current
Icc3
-
-
25
Standby current (TTL)
ISB1
#CE=VIH
#WP=0V/Vcc
-
-
Standby current (CMOS)
ISB2
#CE=Vcc – 0.2V
#WP=0V/Vcc
-
10
Input leakage current
ILI
VIN= 0 V to Vcc
-
-
Output leakage current
ILO
VOUT=0V to Vcc
-
-
Input high voltage
VIH
I/O7~0, #CE,#WE,#RE, _{0.8 x Vcc}
-
#WP,CLE,ALE
Input low voltage
VIL
-
-0.3
-
Output high voltage⁽¹⁾
VOH
IOH=-400µA
2.4
-
Output low voltage⁽¹⁾
VOL
IOL=2.1mA
-
-
Output low current
IOL(RY/#BY)
VOL=0.4V
8
10
Note:
1.
2.
Table 10-3 DC Electrical Characteristics
VOH and VOL may need to be relaxed if I/O drive strength is not set to full.
IOL (RY/#BY) may need to be relaxed if RY/#BY pull-down strength is not set to full
MAX
35
35
35
1
50
±10
±10
Vcc + 0.3
0.2 x Vcc
-
0.4
UNIT
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
mA
Release Date: February 1^st, 2016
57
– Revision B