W29N02GVSIAA Datasheet, PDF (61/79 Pages) Winbond – W29N02GV 2G-BIT 3.3V NAND FLASH MEMORY

W29N02GV
10.8 Program and Erase Characteristics
PARAMETER
SYMBOL
SPEC
TYP
MAX
UNIT
Number of partial page programs
NoP
-
4
cycles
Page Program time
tPROG
250
700
µs
Busy Time for Cache program ⁽¹⁾
tCBSY
3
700
µs
Busy Time for SET FEATURES /GET FEATURES
tFEAT
-
1
µs
Busy Time for program/erase at locked block
tLBSY
-
3
µs
Busy Time for OTP program when OTP is protected
tOBSY
-
30
µs
Block Erase Time
tBERS
2
10
ms
Last Page Program time ⁽²⁾
tLPROG
-
-
-
Busy Time for Two Plane page program and Two Plane Block
tDBSY
0.5
1
µs
Erase
Note:
1.
2.
Table 10-7 Program and Erase Characteristics
tCBSY maximum time depends on timing between internal program complete and data-in.
tLPROG = Last Page program time (tPROG) + Last -1 Page program time (tPROG) – Last page Address,
Command and Data load time.
Release Date: February 1^st, 2016
61
– Revision B