W29N02GVSIAA Datasheet, PDF (48/79 Pages) Winbond – W29N02GV 2G-BIT 3.3V NAND FLASH MEMORY

W29N02GV
Feature Address 81h: Programmable RY/#BY Pull-down Strength
Sub feature
parameter
Options
I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1 I/O0
Value
Notes
P1
RY/#BY
pull-down
strength
Full (default)
Three-quarters
One-half
Reserved (0)
Reserved (0)
Reserved (0)
0
0
00h
1
0
1
01h
1
0
02h
One-quarter
Reserved (0)
1
1
03h
P2
Reserved (0)
00h
P3
Reserved (0)
00h
P4
Reserved (0)
00h
Note:
1.
Table 9-7 Feature Address 81h
The default programmable RY/#BY pull-down strength is set to Full strength. The pull-down strength is used
to change the RY/#BY pull-down strength. RY/#BY pull-down strength should be selected based on expected
loading of RY/#BY. The four supported pull-down strength settings are shown. The device returns to the
default pull-down strength when a power cycle has occurred.
Release Date: February 1^st, 2016
48
– Revision B