W29N02GVSIAA Datasheet, PDF (7/79 Pages) Winbond – W29N02GV 2G-BIT 3.3V NAND FLASH MEMORY

W29N02GV
1. GENERAL DESCRIPTION
The W29N02GV (2G-bit) NAND Flash memory provides a storage solution for embedded systems with
limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing
media data such as, voice, video, text and photos. The device operates on a single 2.7V to 3.6V power
supply with active current consumption as low as 25mA at 3V and 10uA for CMOS standby current.
The memory array totals 276,824,064bytes, and organized into 2,048 erasable blocks of 135,168 bytes.
Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes
for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for
error management functions).
The W29N02GV supports the standard NAND flash memory interface using the multiplexed 8-bit bus to
transfer data, addresses, and command instructions. The five control signals, CLE, ALE, #CE, #RE and
#WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect)
and the RY/#BY (Ready/Busy) for monitoring the device status.
2. FEATURES
 Basic Features
– Density : 2Gbit (Single chip solution)
– Vcc : 2.7V to 3.6V
– Bus width : x8
– Operating temperature
 Industrial: -40°C to 85°C
 Single-Level Cell (SLC) technology.
 Organization
– Density: 2G-bit/256M-byte
– Page size
 2,112 bytes (2048 + 64 bytes)
– Block size
 64 pages (128K + 4K bytes)
 Highest Performance
– Read performance (Max.)
 Random read: 25us
 Sequential read cycle: 25ns
– Write Erase performance
 Page program time: 250us(typ.)
 Block erase time: 2ms(typ.)
– Endurance 100,000 Erase/Program
Cycles(2)
– 10-years data retention
 Command set
– Standard NAND command set
– Additional command support
 Sequential Cache Read
 Random Cache Read
 Cache Program
 Copy Back
 Two-plane operation
– Contact Winbond for OTP feature
– Contact Winbond for block Lock feature
 Lowest power consumption
– Read: 25mA(typ.3V)
– Program/Erase: 25mA(typ.3V)
– CMOS standby: 10uA(typ.)
 Space Efficient Packaging
– 48-pin standard TSOP1
– 63-ball VFBGA
– Contact Winbond for stacked
packages/KGD
Note:
1. Endurance specification is based on 1bit/528 byte ECC (Error Correcting Code).
Release Date: February 1^st, 2016
7
– Revision B